cascadable silicon bipolar mmic amplifier technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 1.8 ghz ? 11.0 db typical gain at 1.0 ghz ? unconditionally stable (k>1) ? low cost plastic package MSA-0204 04a plastic package description the MSA-0204 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a low cost plastic package. this mmic is typical biasing configuration c block c block r bias v cc > 7 v v d = 5 v rfc (optional) in out msa 4 1 2 3 designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in commercial and industrial applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0204 absolute maximum ratings parameter absolute maximum [1] device current 60 ma power dissipation [2,3] 325 mw rf input power +13 dbm junction temperature 150 c storage temperature C65 to 150 c thermal resistance [2,4] : q jc = 90 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 11.1 mw/ c for t c > 121 c. 4. see measurements section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 12.5 f = 0.5 ghz 10.0 12.0 f = 1.0 ghz 11.0 d g p gain flatness f = 0.1 to 1.4 ghz db 1.0 f 3 db 3 db bandwidth ghz 1.8 input vswr f = 0.1 to 3.0 ghz 1.3:1 output vswr f = 0.1 to 3.0 ghz 1.3:1 nf 50 w noise figure f = 1.0 ghz db 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 4.5 ip 3 third order intercept point f = 1.0 ghz dbm 17.0 t d group delay f = 1.0 ghz psec 150 v d device voltage v 4.5 5.0 5.5 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 18 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 25 ma, z o = 50 w units min. typ. max. vswr
3 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 25 ma. i d (ma) figure 3. power gain vs. current. 4 6 8 10 12 14 0 2 4 6 8 10 12 14 g p (db) 15 25 30 40 35 20 gain flat to dc 3 4 5 6 7 8 10 11 12 7 ?5 +25 0 +85 +55 8 6 5 4 3 p 1 db (dbm) nf (db) g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =25ma. nf g p p 1 db 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 0 2 4 6 8 10 12 p 1 db (dbm) i d = 40 ma i d = 18 ma i d = 25 ma v d (v) figure 2. device current vs. voltage. 0 10 20 30 40 i d (ma) 0 2 34 56 1 t c = +85 c t c = +25 c t c = ?5 c 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz i d = 18 ma i d = 25 ma i d = 40 ma MSA-0204 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 25 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .12 170 12.5 4.20 174 C18.5 .119 2 .12 C7 0.2 .12 160 12.4 4.16 168 C18.5 .119 4 .12 C14 0.4 .11 140 12.2 4.05 156 C18.1 .124 6 .12 C29 0.6 .11 121 11.9 3.93 144 C17.9 .127 8 .12 C42 0.8 .10 104 11.6 3.78 134 C17.6 .132 12 .12 C52 1.0 .10 84 11.2 3.62 123 C17.0 .142 14 .13 C61 1.5 .09 42 10.2 3.22 99 C16.1 .157 16 .12 C79 2.0 .07 16 9.1 2.86 77 C14.8 .181 15 .11 C96 2.5 .05 17 8.2 2.57 63 C13.9 .202 16 .09 C115 3.0 .02 96 7.3 2.32 46 C13.2 .220 13 .08 C141 3.5 .08 112 6.5 2.12 29 C12.4 .239 7 .09 C167 4.0 .14 100 5.7 1.93 12 C11.8 .258 0 .11 171 5.0 .35 72 4.0 1.58 C22 C11.2 .276 C15 .17 120 6.0 .59 51 1.6 1.20 C54 C11.3 .272 C33 .32 80 a model for this device is available in the device models section. s 11 s 21 s 12 s 22
04a plastic package dimensions 1 4 3 0.76 (0.030) 0.20 0.050 (0.008 0.002 ) 3.68 (0.145) 2.54 0.25 (0.100 0.010) 12.39 0.76 (0.488 0.030) 1 2 0.51 (0.020) 0.96 (0.038) 4.29 (0.169) 0.76 (0.030) dia. dimensions are in millimeters (inches). rf input rf output & bias ground ground notes: (unless otherwise specified) 1. dimensions are in millimeters (inches) 2. tolerances mm .xx = 0.13 in .xxx = 0.005 2 www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9696e (11/99)
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